View STQ-2016-3_654307.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Product Description
The Sirenza Microdevices STQ-2016-3 is a direct quadrature modulator targeted for use in W-CDMA applications. This device features a 700-2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-2016-3 uses silicon germanium (SiGe) device technology and delivers a typical channel power of -11 dBm with adjacent channel power less than -65 dBc. A digital input shut-down feature is included that, when enabled, attenuates the output by 60 dB. The device is packaged in an industry standard 16 pin TSSOP with exposed paddle for superb RF and thermal ground. The STQ-2016-3Z is packaged in a RoHs compliant and Green 16-pin TSSOP with matte tin finish.
STQ-2016-3 STQ-2016-3Z Pb
RoHS Compliant & Green Package
700-2500 MHz Direct Quadrature Modulator
16 pin TSSOP with Exposed Ground Pad
Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm) Package Height: 0.039 inches (1.0 mm)
Product Features
Functional Block Diagram
BBQP VCC VEE LOP LON VEE SD BBIP 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 BBQN VCC VEE RFP RFN VEE VCC BBIN
* * * * * * *
Min. -13 Typ. -11 0.25 -65 -75 -75 -157 79 81
Excellent carrier feedthrough, -40 dBm constant with output power +4.0 dBm output P1dB Wide baseband input, DC - 500 MHz Superb phase accuracy and amplitude balance, 0.5 deg./0.2 dB Very low noise floor, -157 dBm/Hz Low ACP, -65 dBc
LO QUADRATURE GENERATOR
Applications
W-CDMA Transmitters
1930-1990 MHz Min. -14.5 Typ. -12.5 0.25 -65 -73 -73 -157 77 79 Max. -10.5 0.5 -63 -68 -68 -156 76 2110-2170 MHz Min. -15 Typ. -13 0.25 -65 -73 -73 -156 78 Max. -11 0.5 -63 -68 -68 -155 Type* E C,D E C,D C,D C,D C,D
Product Specifications - W-CDMA Modulation (See Table 1 for Test Conditions)
869-894 MHz Parameters Channel Power Power Flatness Adjacent Channel Power First Alternate Channel Power Second Alternate Channel Power Broadband Noise Floor Signal-to-Noise Ratio 60 MHz offset from carrier
Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth
Comments Guaranteed through Output Power test as specified on Page 2 Range across frequency band Guaranteed through IM3 test as specified on Page 2
Unit dBm dB dBc dBc dBc dBm/Hz dB
Max. -9 0.5 -63 -68 -68 -156
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-104229 Rev B
STQ-2016-3 Direct Quadrature Modulator
Product Specifications - Parameter Variation, W-CDMA Modulation (See Table 1 for Test Conditions)
Vcc (V) Parameters Channel Power Adjacent Channel Power First Alternate Channel Power Second Alternate Channel Power Broadband Noise Floor Signal-to-Noise Ratio
60 MHz offset from carrier
Temp. (Deg. C) 5.25 -12.95 -65.4 -72.9 -72.9 -40 -12.15 -64.95 -75.1 -75.4 +25 -13 -65 -73 -73 -156 78 +85 -13.50 -65.25 -72.9 -72.5 -155.4 77 Type* C,D C,D C,D C,D C,D C,D
Comments
Unit dBm dBc dBc dBc dBm/Hz dB
4.75 -13.05 -64.3 -72.9 -73.25 -156.3 77.8
5.0 -13 -65 -73 -73 -156 78
-155.95 -156.25 77.8 79
Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth
Product Specifications - Parameter Variation, W-CDMA Modulation (See Table 1 for Test Conditions)
LO Drive (dBm) Parameters Channel Power Adjacent Channel Power First Alternate Channel Power Second Alternate Channel Power Broadband Noise Floor Signal-to-Noise Ratio
60 MHz offset from carrier
I/Q Drive (Vpp, Diff.**) +7 1.0 -16.7 -68.7 -68.3 -67.3 -156.7 75 1.7 -13 -65 -73 -73 -156 78 2.5 -10.2 -58.6 -74.7 -73.7 -155.2 80 Type* C,D C,D C,D C,D C,D C,D
Comments
Unit dBm dBc dBc dBc
-1 -13.05 -65.75 -72.3 -72.3
+3 -13 -65 -73 -73 -156 78
-12.95 -64.5 -73.1 -73.05 -156.4 78.3
dBm/Hz -155.25 dB 77.5
Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth
Product Specifications - RF Output, CW Modulation (See Table 2 for Test Conditions)
700-1000 MHz Parameters RF Frequency Range Output Power RF Port Return Loss Output P1dB Carrier Feedthrough Sideband Suppression IM3 Suppression Quadrature Phase Error I/Q Amplitude Balance Supply Voltage (Vcc) Supply Current Device Thermal Resistance Junction-Case Two-tone baseband input @ 1.2Vp-p differential per tone Matched to 50 (refer to schematics on pages 14 and 15) (I/Q inputs = 3.74 Vp-p differential typical) Additional Test Conditions/Comments Unit MHz dBm dB dBm dBm dB dB Deg. dB V mA C/W 34 46 -2 -0.2 +4.75 60 +3.0 Min. 700 -13 -10.5 20 +4.0 -40 40 50 0.5 0.05 +5 73 25 +2 +0.2 -34 34 47 -2 -0.2 0 Typ. Max. 1000 -9.0 1700-2500 MHz Min. 1700 -13 -11.5 16 +3.0 -40 40 53 0.5 0.05 +5 73 25 +2 +0.2 +5.25 86 -32 Typ. Max. 2500 -9 Type* A A,C D A,C A,C A,C A,C D D I A D
+5.25 +4.75 86 60
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification.
303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104229 Rev B
STQ-2016-3 Direct Quadrature Modulator
Product Specifications - LO Input
Parameters LO Frequency LO Drive Level LO Port Return Loss Recommended/Optimum Levels matched to 50 (see schematic on page 12) Additional Test Conditions/Comments Unit MHz dBm dB Min. 700 -1 +3 16 Typ. Max. 2500 +7 Type* I I D
Product Specifications - Shut-Down Input (Pin 7)
Parameters Shut-Down Current Shut-Down Attenuation Shut-Down Pin Resistance Shut-Down Pin Capacitance Shut-down Control Voltage Thresholds Shut-Down Settling Time @ 1MHz @ 1MHz Shut-down disabled (normal operation) Shut-down enabled Additional Test Conditions/Comments Unit mA dB kohm pF V V ns 3.75 0.0 <450 Min. Typ. 42 60 11.9 5.2 Vcc 1.5 Max. 60 Type* A D D D I I D
Product Specifications - Baseband Modulation Input
Parameters Baseband Frequency Input Baseband Input Resistance Baseband Input Capacitance Additional Test Conditions/Comments -3dB bandwidth, baseband inputs terminated in 50 ohms per pin per pin Unit MHz kohms pF Min. DC 4.4 0.5 Typ. Max. 500 Type* I D D
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100 % tested through correlated CW parameter, I = Device input specification.
**Peak-to-Peak Differential (Vpp, Diff.) Baseband Voltage Definition:
1.5
1
Vpp
0.5
Vp
I
0
0.5
1
V
0 100 200
pp , Diff
400 Sa mp les
2 Vpp
500 600 700 800
1.5
300
Plot of Single-Ended W-CDMA Baseband Signal (BBIP)
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-104229 Rev B
STQ-2016-3 Direct Quadrature Modulator
Table 1. W-CDMA Test Conditions
(Unless otherwise noted) VCC (pins 2,10,15) TA Baseband Input (Pins 1, 8, 9, 16) LO Input (Pins 4, 5) +5V +25C 1.9V DC bias, W-CDMA Test Model 1 w/ 64 DPCH (PAR = 10.54), 850mVp-p per pin = 1.7 Vp-p differential drive, I and Q signals in quadrature +4.0 dBm @ 2140 MHz
Table 2. CW Test Conditions
(for all product specifications unless otherwise noted) VCC (pins 2,10,15) TA Baseband Input (Pins 1, 8, 9, 16) LO Input (Pins 4, 5) +5V +25C 1.9V DC bias, 200kHz frequency, 300 mVp-p per pin = 600 mVp-p differential drive, I and Q signals in quadrature -5 dBm @ 1960 MHz
Pin Out Description
Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Function BBQP VCC VEE LOP LON VEE SD BBIP BBIN VCC VEE RFN RFP VEE VCC BBQN Description Q-channel baseband input, positive terminal Positive supply (+5V) Ground Local oscillator input, positive terminal Local oscillator input, negative terminal Ground Shut-down control I-channel baseband input, positive terminal I-channel baseband input, negative terminal Positive supply (+5V) Ground RF output, negative terminal RF output, positive terminal Ground Positive supply (+5V) Q-channel baseband input, negative terminal Nominal DC bias voltage is 1.9V (biased internally) Nominal DC voltage is 2.4V. Output should be AC-coupled. Nominal DC voltage is 2.4V. Output should be AC-coupled. Logic high = normal operation; Logic Low = shut-down enabled. Nominal DC bias voltage is 1.9V (biased internally) Nominal DC bias voltage is 1.9V (biased internally) Nominal DC voltage is 2.0V. Input should be AC-coupled. Nominal DC voltage is 2.0V. Input should be AC-coupled. Additional Comments Nominal DC bias voltage is 1.9V (biased internally)
Absolute Maximum Ratings
Parameters Supply Voltage (VCC) LO, RF Input (LOP, LON, RFP, RFN) Baseband Min Input Voltage (BBIP, BBIN, BBQP, BBQN) Baseband Max Input Voltage (BBIP, BBIN, BBQP, BBQN) Operating Temperature Storage Temperature Value 6.0 +10 0 3 -40 to +85 -65 to +150 Unit VDC dBm VDC VDC C C
Part Number Ordering Information
Devices/Reel Part Number STQ-2016-3 STQ-2016-3Z Reel Size 7" 7" Min. 500 500 Max. 1000 1000
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-104229 Rev B
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
STQ-2016-3 Direct Quadrature Modulator
Broadband Noise Floor
15 1500
Broadband Noise Floor (dBm/Hz) 15 0
Broadband Noise Floor (dBm/Hz) Broadband Noise Floor (dBm/Hz)
1522 15
15 2
1544 15
15 4
1566 15
15 6
158 15 8 6 6
15 8
0 2 4 2 0 2 LO Drive Level (dBm) LO I/Q Drive = 1 Vpp, Diff. Drive Level (d Bm) I/Q Drive = 1 V pp, Diff. I/Q Drive = 2 Vpp, Diff. I/Q Drive Vpp, Diff. I/Q Drive = 3 = 2 V pp, Diff. I/Q Drive Vpp, Diff. I/Q Drive = 4 = 3 V pp, Diff.
4
4
2
4
6
6
8
1
1.5
8
2 2.5 3 IQ Drive Level (V pp, Diff.)
3.5
4
I/Q Drive = 4 V pp, Diff.
LO LO LO LO LO
D rive = D rive = D rive = D rive = D rive =
-5 dBm -2 dBm -1 dBm +4 dB m +7 dB m
Figure 1. Broadband Noise Floor (60 MHz Offset) Vs. LO Drive Level, LO Frequency = 2140 MHz.
Figure 2. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, LO Frequency = 2140 MHz.
156
156
Broadband Noise Floor (dBm/Hz)
Broadband Noise Floor (dBm/Hz)
156.5
156.5
157
157
157.5
157.5
158
4.7
4.8
4.9
5 Vcc (Vdc)
5.1
5.2
158
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V
Figure 3. Broadband Noise Floor (60 MHz Offset) Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 4. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.
156
156
Broadband Noise Floor (dBm/Hz)
Broadband Noise Floor (dBm/Hz)
156.5
156.5
157
157
157.5
157.5
158
158 50 0 50 Temperature (Deg. C) 100
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C
Figure 5. Broadband Noise Floor (60 MHz Offset) Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021
Figure 6. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 5
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
STQ-2016-3 Direct Quadrature Modulator
Signal-to-Noise Ratio
14 9 14 7 Signal-to-Noise Ratio (dB)
Signal-to-Noise Ratio (dB) 14 9 14 7 14 5 14 3 14 1 13 9 13 7
14 5 14 3 14 1 13 9 13 7
13 5
13 5
1
1.5
6
4
2
0 2 LO Drive Level (dBm)
4
6
8
2 2.5 3 IQ Drive Level (V pp, Diff.)
3.5
4
I/Q I/Q I/Q I/Q
Drive = Drive = Drive = Drive =
1 2 3 4
Vpp, Vpp, Vpp, Vpp,
D iff. D iff. D iff. D iff.
LO LO LO LO LO
D rive = D rive = D rive = D rive = D rive =
-5 dBm -2 dBm -1 dBm +4 dB m +7 dB m
Figure 7. Signal-to-Noise Ratio Vs. LO Drive Level, LO Frequency = 2140 MHz.
Figure 8. Signal-to-Noise Ratio Vs. I/Q Drive Level, LO Frequency = 2140 MHz.
145
145
Signal-to-Noise Ratio (dB)
Signal-to-Noise Ratio (dB)
144
144
143
143
142
142
141
4.7
4.8
4.9
5 Vcc (Vdc)
5.1
5.2
141
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V
Figure 9. Signal-to-Noise Ratio Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 10. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.
146
146
145 Signal-to-Noise Ratio (dB) 50 25 0 25 50 Temperature (Deg. C) 75 100 Signal-to-Noise Ratio (dB)
145
144
144
143
143
142
142
141
141
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C
Figure 11. Signal-to-Noise Ratio Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021
Figure 12. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 6
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
STQ-2016-3 Direct Quadrature Modulator
Channel Power
4 6 Channel Power (dBm) 8 10 12 14 16 18
1504
6 Channel Power (dBm) Broadband Noise Floor (dBm/Hz)
152 8
10 154 12 14 156 16
158 18 6 6 0 2 4 2 0 2 LO Drive Level (dBm) LO Drive Level (d Bm) I/Q Drive = 1 Vpp, Diff. I/Q Drive = 1 V pp, Diff. I/Q Drive = 2 Vpp, Diff. I/Q Drive = 2 V pp, Diff. I/Q Drive = 3 Vpp, Diff. I/Q Drive = 3 V pp, Diff. I/Q Drive = 4 Vpp, Diff. 4 2 6 8
4
4
6
8
1
1.5
2 2.5 3 IQ Drive Level (Vpp, D iff.)
3.5
4
I/Q Drive = 4 V pp, Diff.
LO LO LO LO LO
D rive D rive D rive D rive D rive
= = = = =
-5 dBm -2 dBm -1 dBm +4 dBm +7 dBm
Figure 13. Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz.
Figure 14. Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz.
4 6 Channel Power (dBm) 8 10 12 14 16 18 21 00
4 6 Channel Power (dBm)
21 20 2140 LO Frequency (MHz) 21 60 21 80
8 10 12 14 16 18
1
1.5
I/Q I/Q I/Q I/Q
Drive Drive Drive Drive
=1 =2 =3 =4
V pp, V pp, V pp, V pp,
Diff. Diff. Diff. Diff.
2 2.5 3 IQ Drive Level (Vpp, Diff.)
3.5
4
LO Freq. = 2110 M Hz LO Freq. = 2140 M Hz LO Freq. = 2170 M Hz
Figure 15. Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm.
Figure 16. Channel Power Vs. I/Q Drive Level, over LO Frequency Range,LO Drive = +4.0 dBm.
11
11
Channel Power (dBm)
Channel Power (dBm)
12
12
13
13
14
14
15
4.7
4.8
4.9
5 Vcc (Vdc)
5.1
5.2
15
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V
Figure 17. Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021
Figure 18. Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 7
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
150 11
STQ-2016-3 Direct Quadrature Modulator
10
Channel Power (dBm) Broadband Noise Floor (dBm/Hz)
11
152 12
Channel Power (dBm)
6 50 0 2 0 LO Drive Level (dBm) 25 I/Q Drive = 1 Vpp, Diff. Temperature (Deg. C) 4 25 2 4 6
12
154 13
13
156 14
14
15
158 15 8 100
50
75
16
1
1.2
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 2 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 3 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. I/Q Drive = 4 Vpp, Diff.
1.4 1.6 IQ Drive Level (Vpp, Diff.)
1.8
2
Temp. = -40 Deg. C Temp. = +25 Deg. C Temp. = +85 Deg. C
Figure 19. Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 20. Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz.
Adjacent Channel Power
45
45
Adjacent Channel Power (dBc)
Adjacent Channel Power (dBc)
50
50
55
55
60
60
65
65
70
70
1
1.5
6
4
2
0 2 LO Drive Level (d Bm)
4
6
8
2 2.5 3 IQ Drive Level (Vpp, D iff.)
3.5
4
I/Q I/Q I/Q I/Q
Drive Drive Drive Drive
=1 =2 =3 =4
V pp, V pp, V pp, V pp,
Diff. Diff. Diff. Diff.
LO LO LO LO LO
D rive D rive D rive D rive D rive
= = = = =
-5 dBm -2 dBm -1 dBm +4 dBm +7 dBm
Figure 21. Adjacent Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz.
Figure 22. Adjacent Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz.
45
45
Adjacent Channel Power (dBc)
55
Adjacent Channel Power (dBc)
21 20 2140 LO Frequency (MHz) 21 60 21 80
50
50
55
60
60
65
65
70 21 00
70
1
1.5
I/Q I/Q I/Q I/Q
Drive Drive Drive Drive
=1 =2 =3 =4
V pp, V pp, V pp, V pp,
Diff. Diff. Diff. Diff.
2 2.5 3 IQ Drive Level (Vpp, Diff.)
3.5
4
LO Fre q. = 2110 MHz LO Fre q. = 2140 MHz LO Fre q. = 2170 MHz
Figure 23. Adjacent Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. 303 S. Technology Court, Broomfield, CO 80021
Figure 24. Adjacent Channel Power Vs. I/Q Drive Level, over LO Frequency Range, LO Drive = +4.0 dBm. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 8
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
150 64
STQ-2016-3 Direct Quadrature Modulator
64
Adjacent Channel Floor (dBm/Hz) Broadband Noise Power (dBc)
152
66
154
Adjacent Channel Power (dBc)
6 4 2 0 2 4 6 8
65
65
66
67
156
67
68
158
68
69
4.7
LO Drive Level (dBm) 4.8 4.9 5 I/Q Drive = 1 Vpp, Diff. Vcc (Vdc) I/Q Drive = 2 Vpp, Diff. I/Q Drive Vpp, Diff. = 1.5 Vpp, Diff. I/Q Drive = 3 I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 4 Vpp, Diff.
5.1
5.2
69
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.9 Vpp, Diff.
Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V
Figure 25. Adjacent Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 26. Adjacent Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.
64
64
Adjacent Channel Power (dBc)
66
Adjacent Channel Power (dBc) 50 25 0 25 50 Temperature (Deg. C ) 75 100
65
65
66
67
67
68
68
69
69
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Temp = -40 De g. C Temp = +25 De g. C Temp = +85 De g. C
Figure 27. Adjacent Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 28. Adjacent Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz.
First Alternate Channel Power
60
First Alternate Channel Power (dBc) 60
First Alternate Channel Power (dBc)
65
65
70
70
75
75
80
80
1
1.5
6
4
2
0 2 LO Drive L evel (d Bm)
4
6
8
2 2.5 3 IQ Drive Level (Vpp, D iff.)
3.5
4
I/Q I/Q I/Q I/Q
Drive Drive Drive Drive
=1 =2 =3 =4
V pp, V pp, V pp, V pp,
Diff. Diff. Diff. Diff.
LO LO LO LO LO
D rive D rive D rive D rive D rive
= = = = =
-5 dBm -2 dBm -1 dBm +4 dBm +7 dBm
Figure 29. First Alternate Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021
Figure 30. First Alternate Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 9
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
STQ-2016-3 Direct Quadrature Modulator
60 150
Broadband Noise Floor (dBm/Hz) First Alternate Channel Power (dBc)
60 First Alternate Channel Power (dBc)
21 20 2140 LO Drive Level (dBm) LO I/Q Drive = 1 Vpp, Diff. Frequency (MHz) I/Q Drive = 1 Diff. I/Q Drive = 2 Vpp, V pp, Diff. I/Q Drive = 2 Diff. I/Q Drive = 3 Vpp, V pp, Diff. I/Q Drive = 3 Diff. I/Q Drive = 4 Vpp, V pp, Diff. I/Q Drive = 4 V pp, Diff.
4 2 0 2 4
152 65
65
154 70
70
156 75
75
158 80 6 21 00
21 60
6
8
21 80
80
1
1.5
2 2.5 3 IQ Drive Level (Vpp, Diff.)
3.5
4
LO Freq. = 2110 MHz LO Freq. = 2140 MHz LO Freq. = 2170 MHz
Figure 31. First Alternate Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm.
Figure 32. First Alternate Channel Power Vs. I/Q Drive Level, LO Drive = +4.0 dBm.
70 First Alternate Channel Power (dBc) First Alternate Channel Power (dBc)
70
72
72
74
74
76
76
78
78
80
4.7
4.8
4.9
5 Vcc (Vdc)
5.1
5.2
80
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V
Figure 33. First Alternate Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 34. First Alternate Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz.
70 First Alternate Channel Power (dBc) First Alternate Channel Power (dBc)
70
72
72
74
74
76
76
78
78
80
50
25
0 25 50 Temperature (Deg. C )
75
100
80
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C
Figure 35. First Alternate Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021
Figure 36. First Alternate Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 10
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
STQ-2016-3 Direct Quadrature Modulator
Second Alternate Channel Power
60 Second Alternate Channel Power (dBc)
60 Second Alternate Channel Power (dBc)
65
65
70
70
75
75
80
80
85
85
6
4
2
0 2 LO Drive Level (d Bm)
4
6
8
1
1.5
2 2.5 3 IQ Drive Level (Vpp, D iff.)
3.5
4
I/Q I/Q I/Q I/Q
Drive Drive Drive Drive
=1 =2 =3 =4
V pp, V pp, V pp, V pp,
Diff. Diff. Diff. Diff.
LO LO LO LO LO
D rive D rive D rive D rive D rive
= = = = =
-5 dBm -2 dBm -1 dBm +4 dBm +7 dBm
Figure 37. Second Alternate Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz.
Figure 38. Second Alternate Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz.
60 Second Alternate Channel Power (dBc)
60 Second Alternate Channel Power (dBc)
21 20 2140 LO Frequency (MHz) 21 60 21 80
65
65
70
70
75
75
80
80
85 21 00
85
1
1.5
I/Q I/Q I/Q I/Q
Drive Drive Drive Drive
=1 =2 =3 =4
V pp, V pp, V pp, V pp,
Diff. Diff. Diff. Diff.
2 2.5 3 IQ Drive Level (Vpp, Diff.)
3.5
4
LO Freq. = 2110 MHz LO Freq. = 2140 MHz LO Freq. = 2170 MHz
Figure 39. Second Alternate Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm.
Figure 40. Second Alternate Channel Power Vs. I/Q Drive Level, LO Drive = +4.0 dBm.
70 Second Alternate Channel Power (dBc) Second Alternate Channel Power (dBc)
70
72
72
74
74
76
76
78
78
80
80 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 5.2
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V
Figure 41. Second Alternate Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021
Figure 42. Second Alternate Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 11
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54
STQ-2016-3 Direct Quadrature Modulator
70 Second Alternate Channel Power (dBc) Second Alternate Channel Power (dBc)
70
72
72
74
74
76
76
78
78
80
80 50 25 0 25 50 Temperature (Deg. C ) 75 100
1.4
1.5
1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.)
1.9
I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff.
Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C
Figure 43. Second Alternate Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz.
Figure 44. Second Alternate Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz.
Typical Performance Distribution Over Multiple Lots
14 10
Mean = -12.87
12
Mean = -66.33 Std. Dev. = 1.737
8
Std. Dev. = 0.43
Percentage of Total Units (%)
Percentage of Total Units (%)
10
6
8
6
4
4 2 2
0
16
15
14
13 Ch annel P ower (dB m)
12
11
10
0
75
70
65 Adjacent Ch ann el Po wer (dBc)
60
55
Figure 45. Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff.
25
Figure 46. Adjacent Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff.
35
Mean = -74.70 Std. Dev. = 1.23
Mean = -74.6 Std. Dev. = 1.28
20 Percentage of Total Units (%) Percentage of Total Units (%) 25 30
15
20
15
10
10 5 5
0
0 80 78 76 74 First Altern ate C han nel Power (dBc) 72 70
80
78
76 74 Secon d Alternate Chann el P ower (dB c)
72
70
Figure 47. First Alternate Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. 303 S. Technology Court, Broomfield, CO 80021
Figure 48. Second Alternate Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. http://www.sirenza.com EDS-104229 Rev B
Phone: (800) SMI-MMIC 12
STQ-2016-3 Direct Quadrature Modulator
20
12
Mean = -156.65 Std. Dev. = 0.43
15 Percentage of Total Units (%) Percentage of Total Units (%) 8 10
Mean = 143.78 Std. Dev. = 0.52
10
6
4
5 2
0
160
15 9
15 8 157 156 Broad ban d N oise Flo or ( dBm/H z)
155
154
0 140
14 1
142
14 3 144 14 5 Signal-to-Noise Ratio (dB)
146
14 7
14 8
Figure 49. Broadband Noise Floor (60 MHz Offset) Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff.
Figure 50. Signal-to-Noise Ratio (60 MHz Offset) Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff.
Package Dimensions ("16" Package)
Dimensions in inches (mm)
STQ 2016 (Z) XZZZZ
Part #
Lot #
NOTES: 1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2. TOLERANCE .004" (0.1mm) UNLESS OTHERWISE SPECIFIED. 3. COPLANARITY: .004" (0.1mm) 4. CONTROLLING DIMENSION IS MILLIMETER, CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. 5. FOLLOWED FROM JEDEC MO-153.
0 8
Suggested PCB Pad Layout
0.049 (1.25) 0.012 (0.30) 0.118 (3.0) 0.024 (0.63)
0.014 (0.35)
0.118 (3.0) 0.010 (0.25) via 0.028 (0.7)
0.035 (0.9) 0.272 (6.9) all units are in inches (mm) - Indicates metalization - vias connect pad to underlying ground plane
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 13
http://www.sirenza.com EDS-104229 Rev B
700 - 1000 MHz Application Schematic
BBQP
P8 P9
STQ-2016-3 Direct Quadrature Modulator
BBQN
VCC
H2
1 2
L1 VCC VCC C3 C6 P10 U1 16 1 BBQP BBQN 15 2 VCC VCC 14 3 VEE VEE 13 4 LOP RFP STQ-2016 12 5 LON RFN 11 6 VEE VEE 10 7 VCC SD 9 8 BBIP BBIN VCC C9 C10 4 T4 5 C1 6 C18 VCC Connect backside exposed paddle to RF/DC ground. R8 R9 R10 8 1 P11 R1 R7
LOin
8 T3 1
5
C4
4 C5 C17
RFout
Fully Assembled PCB
2.0" (50.8mm) BBQP VCC P8 P9 BBQN
Shut-down H2
1 2
SH1
VCC
1 2 H1 2.0" (50.8mm) C3 L1 P1 0 LO In H2 1 2 SH1 T3 R1 C6 C4 C5 C17 R8 R9 U1 R7 C9 C10 C16 C18 R10 P11 T4
BBIP
P12
P13
BBIN
RF Out
Shutdown GND
Note: Remove SH1 to enable modulated output.
BBIP P12 P13 BBIN
Bill of Materials (for 700 - 1000 MHz Evaluation Board P/N STQ-2016-3EVB-1)
Component Designator U1 P8, P9, P10, P11, P12, P13 H1, H2 T3, T4 L1 R1, R7, R9, R10 R8 C6, C18 C9, C17 C3 C4, C5, C10, C16 SH1 1:1 1uH 200 ohm 1 kohm 33pF 1nF 2.2uF 10pF Value Qty 1 6 2 2 1 4 1 2 2 1 4 1 Vendor SMDI Johnson Components AMP Panasonic Panasonic Venkel Venkel Venkel Venkel Venkel Venkel 3M Part Number STQ-2016 142-0701-851 640453-2 EHF-FD1618 ELJ-FA1R0KF2 CR1206-8W-2000T CR0603-16W-1001FT C0603COG500-330JNE C0603COG500-102JNE C1206Y5V160-225ZNE C0603COG500-100JNE 929950-00 Description SiGe Direct Quadrature Modulator SMA connector, end launch with tab, for .062" thick board 2-pin header, right angle RF transformer, 700-1300MHz Inductor, 1210 footprint, 10% tolerance Resistor, 1206 footprint, 1% tolerance Resistor, 0603 footprint, 1% tolerance Capacitor, 0603 footprint, COG dielectric, 5% tolerance Capacitor, 0603 footprint, COG dielectric, 5% tolerance Capacitor, 1206 footprint, Y5V dielectric, 16V rating Capacitor, 0603 footprint, COG dielectric, 5% tolerance Shunt for 2-pin header
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 14
http://www.sirenza.com EDS-104229 Rev B
1.7 - 2.5 GHz Application Schematic
BBQP P8 P9
STQ-2016-3 Direct Quadrature Modulator
BBQN
VCC
H2
1 2
L1 VCC VCC C3 C6 P10 U1 16 1 BBQP BBQN 15 2 VCC VCC 14 3 VEE VEE 13 4 LOP RFP STQ-2016 12 5 LON RFN 11 6 VEE VEE 10 7 VCC SD 9 8 BBIP BBIN VCC Connect backside exposed paddle to RF/DC ground. VCC C9 C10 4 T4 5 C16 C18 8 C2 1 P11 R1 R7
LOin
C1
8 T3 1
5
C4
4 C5 C17
RFout
Fully Assembled PCB
2.0" (50.8mm) BBQP VCC 1 2 H1 2.0" (50.8mm) C3 L1 P10 T3 LO In H2 1 2 SH1 C1 R1 C6 C4 C5 C17 R8 R9 U1 R7 C9 C10 T4 C2 C16 C18 R10 P11 P8 P9 BBQN
Shut-down H2
1 2
SH1 R8 R9 R1 0
VCC
BBIP
P12
P13
BBIN
RF Out
Shutdown GND
Note: Remove SH1 to enable modulated output.
BBIP P12 P13 BBIN
Bill of Materials (for 1.7 - 2.5 GHz Evaluation Board P/N STQ-2016-3EVB-2)
Component Designator U1 P8, P9, P10, P11, P12, P13 H1, H2 T3, T4 L1 R1, R7, R9, R10 R8 C1, C2 C6, C18 C9, C17 C3 C4, C5, C10, C16 SH1 1:1 1uH 200 ohm 1 kohm 0.5pF 6.8pF 1nF 2.2uF 2.2pF Value Qty 1 6 2 2 1 4 1 2 2 2 1 4 1 Vendor SMDI Johnson Components AMP Panasonic Panasonic Venkel Venkel Venkel Venkel Venkel Venkel Venkel 3M Part Number STQ-2016 142-0701-851 640453-2 EHF-FD1619 ELJ-FA1R0KF2 CR1206-8W-2000T CR0603-16W-1001FT Description SiGe Direct Quadrature Modulator SMA connector, end launch with tab, for .062" thick board 2-pin header, right angle RF transformer, 1200-2200MHz Inductor, 1210 footprint, 10% tolerance Resistor, 1206 footprint, 1% tolerance Resistor, 0603 footprint, 1% tolerance
C0603COG500-0R5CNE Capacitor, 0603 footprint 0.25pF tolerance C0603COG500-6R8CNE Capacitor, 0603 footprint, COG dielectric, 0.25pF tol. C0603COG500-102JNE C1206Y5V160-225ZNE Capacitor, 0603 footprint, COG dielectric, 5% tolerance Capacitor, 1206 footprint, Y5V dielectric, 16V rating
C0603COG500-2R2CNE Capacitor, 0603 footprint, COG dielectric, 0.25pF tolerance 929950-00 Shunt for 2-pin header http://www.sirenza.com EDS-104229 Rev B
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 15
STQ-2016-3 Direct Quadrature Modulator
Figure 51. Measurement System for Modulation Performance Tests: Channel Power, Adjacent Channel Power, First Alternate Channel Power, Second Alternate Channel Power, and Broadband Noise Floor.
B and-P F ass ilter B = 35 M z W H F = 2140 M z c H L O T elonic 1500-5-5EE N oise T O est nly L -P ow ass Filters F = 1.9 M z c H Sirenza ST -2016-3 Q R out F
B -P F and ass ilter B = 90 M z W H F = 2080 M z c H
A plifier m +28 dB G ain
A gilent E 4437B Signal G enerator
II
QQ
M iniC ircuits SL P-1.9
K L T 327-1 &F
M ini-C ircuits ZL H -1042J
N oise T O est nly
R hode &S arz chw F 7 Spectrum SIQ A nalyzer
I
I
Q
Q
R hode &Schw arz A IQI/QM M odulation G enerator
Figure 52. Measurement System for Continuous Wave Performance Tests: Output Power, P1dB, Carrier Feedthrough, Sideband Suppresion, and IM3 Suppression.
499 50 5.11K 10K 5.11K VCC 2K AD8138 VCC 1K + VOCM 50 50 600mV p-p differential DC levels for BBIN, BBIP, BBQN, BBQP are 1.9V nominal. The offset required to null carrier feedthrough is typically <20mV.
200kHz sine 145mV amplitude 0 degree phase BBI 0 90 200kHz sine 145mV amplitude +90 degree phase 50 BBQ
24.9
499
STQ-x016
2K BBI+ BBILO+ LOBBQ+ BBQRF out RF Match
-4dBm LO
LO Match
0 90
RF+ RF-
499 5.11K 10K VCC
2K
VCC 1K
AD8138 50 + VOCM 50 600mV p-p differential +5V
- for intermodulation tests, synthesizer set for 200kHz and 220kHz sine outputs on I and Q channels
5.11K
24.9
499
2K
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 16
http://www.sirenza.com EDS-104229 Rev B

▲Up To Search▲

Price & Availability of STQ-2016-3

	To Download STQ-2016-3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .